Characterization of photoresponse, photovoltage, and photonic gate response in a pseudomorphic p-channel modulation-doped field-effect transistor
Identifieur interne : 011A03 ( Main/Repository ); précédent : 011A02; suivant : 011A04Characterization of photoresponse, photovoltage, and photonic gate response in a pseudomorphic p-channel modulation-doped field-effect transistor
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Abstract
Optoelectronic responses in a pseudomorphic p-channel modulation-doped field-effect transistor (p-MODFET) on GaAs have been characterized. Semiempirical models are provided and verified with experimental data. Significantly suppressed drain photoresponse and reduced gate photoresponse have been observed in p-MODFET due to the low hole mobility and high Schottky barrier on the InGaP layer. The drain photoresponse is predominantly modulated by the photoconductive effect of excess majority carriers while the photovoltage and photonic gate response are governed by the photovoltaic effect caused by excess minority carriers and energy barriers between the channel and dopant layers. © 2000 American Institute of Physics.
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Kim</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street S.E., Minneapolis, Minnesota 55455</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street S.E., Minneapolis</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0527983</idno><date when="2000-12-11">2000-12-11</date><idno type="stanalyst">PASCAL 00-0527983 AIP</idno><idno type="RBID">Pascal:00-0527983</idno><idno type="wicri:Area/Main/Corpus">012123</idno><idno type="wicri:Area/Main/Repository">011A03</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>High electron mobility transistors</term><term>Hole mobility</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Minority carriers</term><term>Photoconductivity</term><term>Schottky barriers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8530T</term><term>7361E</term><term>7350G</term><term>7350P</term><term>7350D</term><term>7330</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Transistor mobilité électron élevée</term><term>Porteur minoritaire</term><term>Mobilité trou</term><term>Barrière Schottky</term><term>Photoconductivité</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Optoelectronic responses in a pseudomorphic p-channel modulation-doped field-effect transistor (p-MODFET) on GaAs have been characterized. 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